si4412ady vishay siliconix document number: 71105 s-03951?rev. b, 26-may-03 www.vishay.com 2-1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.024 @ v gs = 10 v 8 30 0.035 @ v gs = 4.5 v 6.6 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet dd g s d d s s ordering information: si4412ady si4412ady-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 8 5.8 continuous drain current (t j = 150 c) a t a = 70 c i d 6.4 4.6 a pulsed drain current (10 s pulse width) i dm 30 a continuous source current (diode conduction) a i s 2.3 1.2 maximum power dissipation a t a = 25 c p d 2.5 1.3 w maximum power dissipation a t a = 70 c p d 1.6 0.8 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 45 50 maximum junction-to-ambient a steady state r thja 80 95 c/w maximum junction-to-foot steady state r thjf 16 20 c/w notes a. surface mounted on 1? x 1? fr4 board.
si4412ady vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 71105 s-03951?rev. b, 26-may-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 8 a 0.020 0.024 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 4.5 v, i d = 6.6 a 0.029 0.035 forward transconductance a g fs v ds = 15 v, i d = 8 a 21 s diode forward voltage a v sd i s = 2.3 a, v gs = 0 v 0.75 1.1 v dynamic b total gate charge q g 16 20 gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 2 a 3 nc gate-drain charge q gd 1.5 gate resistance r g 0.5 2.0 turn-on delay time t d(on) 15 20 rise time t r v dd = 15 v, r l = 15 6 12 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 26 50 ns fall time t f 10 20 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/ s 40 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 6 12 18 24 30 012345 v gs = 10 thru 5 v t c = - 125 c -55 c 3 v 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 4 v
si4412ady vishay siliconix document number: 71105 s-03951?rev. b, 26-may-03 www.vishay.com 2-3 typical characteristics (25 c unless noted) - on-resistance ( r ds(on) ) 0 200 400 600 800 1000 1200 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 4 8 12 16 0.00 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 2 a i d - drain current (a) v gs = 10 v i d = 8 a v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 0246810 t j = 25 c i d = 3.9 a 30 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 4.5 v t j = 150 c
si4412ady vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 71105 s-03951?rev. b, 26-may-03 typical characteristics (25 c unless noted) 0 30 50 10 20 power (w) single pulse power time (sec) 40 10 -3 10 -2 1 10 600 10 -1 10 -4 100 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 80 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 100 600 10 10 -1 10 -2 10 -3
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